2sk4075
2010-09-29
大量原装正品现货供应
DESCRIPTION
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
Pure Sn (Tin) Tape
2500 p/reel
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
? Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
? Low Ciss: Ciss = 2900 pF TYP.
? Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25?C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ?20 V
Drain Current (DC) (TC = 25?C) ID(DC) ?60 A
Drain Current (pulse) Note1 ID(pulse) ?180 A
Total Power Dissipation (TC = 25?C) PT1 52 W
Total Power Dissipation (TA = 25?C) PT2 1.0 W
Channel Temperature Tch 150 ?C
Storage Temperature Tstg –55 to +150 ?C
Single Avalanche Current Note2 IAS 28 A
Single Avalanche Energy Note2 EAS 78 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25?C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 2.4 ?C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 125 ?C/W
(TO-252)
2006