IRFU430B
2010-10-11
IRFR430B / IRFU430B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
? 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
? Low gate charge ( typical 25 nC)
? Low Crss ( typical 16 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
Absolute Maximum Ratings TC = 25?C unless otherwise noted
Thermal Characteristics
Symbol Parameter IRFR430B / IRFU430B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25?C) 3.5 A
- Continuous (TC = 100?C) 2.2 A
IDM Drain Current - Pulsed (Note 1) 14 A
VGSS Gate-Source Voltage ? 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ
IAR Avalanche Current (Note 1) 3.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25?C) * 2.5 W
Power Dissipation (TC = 25?C) 48 W
- Derate above 25?C 0.38 W/?C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 ?C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 ?C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 2.6 ?C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 50 ?C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 110 ?C/W
* When mounted on the minimum pad size recommended (PCB Mount)